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Gallium Phosphide (GaP) Semiconductor Crystal

Item Number:
ALB-GaP-CR
Product Name:
Gallium Phosphide (GaP) Semiconductor Crystal
CAS Number:
[12063-98-8]
Formula:
GaP
Shape:
Wafer (slice / substrate), boule and crystal form
Size:
Custom-made
Quantity:
10pc, 100pc, 1000pc
Supplier:
ALB Materials Inc
Synonyms:

GaP Wafers, GaP Substrate, GaP Slice, Gallium Phosphide Wafers, Gallium Phosphide Substrate, Gallium Phosphide Slice

Price($, USD):

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Related Products:
Gallium Products,Phosphorus Products
Item No. Product

Inquiry($, USD)

ALB-GaP-CR-01GaP wafer, undoped, (100) 10x10x0.5 mm, 1sp

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ALB-GaP-CR-02GaP wafer, undoped, (100) 10x10x0.5 mm, 2sp

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ALB-GaP-CR-03GaP wafer, undoped, (100) 2" dia X 0.45mm, 2sp, R: (3.x10^13-6.9x10^14 )ohm.cm, Semi-Insulating

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ALB-GaP-CR-04GaP wafer, undoped, (100) 2" dia X 0.45mm, 1sp, R: 4.2x10^7-4x10^9 ohm.cm, Semi-Insulating

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ALB-GaP-CR-05GaP wafer, S doped, (100), 2" dia x 0.5 mm, 1sp

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ALB-GaP-CR-06GaP wafer, S doped, (100), 2" dia x 0.5 mm, 2sp

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ALB-GaP-CR-07GaP wafer, S doped, (100), 5 x 5 x 0.33 mm, 1sp

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ALB-GaP-CR-08GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp

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ALB-GaP-CR-09GaP wafer, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm dia x 0.25 mm, 1sp

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ALB-GaP-CR-10GaP wafer, Zn doped, P type, (100), 2" dia x 0.45 mm, 1sp (carrier conc.:4.0-5.2E17/cc)

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ALB-GaP-CR-11GaP Wafer, undoped (110) 10x10x0.45 mm, 1sp

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ALB-GaP-CR-12GaP Wafer, undoped (110) 5x5x0.3 mm, 1sp

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ALB-GaP-CR-13GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp

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ALB-GaP-CR-14GaP Wafer, undoped, (111), 10x10x0.35mm, 2sp

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ALB-GaP-CR-15GaP Wafer, undoped, (111), 10x10x0.5mm, 2sp

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ALB-GaP-CR-16GaP Wafer, undoped, (111), 2" x 0.4mm, 2sp,

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ALB-GaP-CR-17GaP Wafer, undoped, (111), 2" x 0.5mm, 1sp

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ALB-GaP-CR-18GaP Wafer, undoped, (111), 3" x 0.45mm, 1sp

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ALB-GaP-CR-19GaP Wafer, undoped, (111)B, 2" x 0.4mm, 2sp, Semi-Insulating

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ALB-GaP-CR-20GaP wafer, undoped, (111), 2" dia X 0.45mm, 2sp, R> 7 x10^7 ohm.cm, Semi-Insulating

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ALB-GaP-CR-21GaP wafer, S doped, (111), 2" dia x 0.45mm, 1sp

Inquiry

ALB-GaP-CR-22GaP wafer, S doped, (111), 2" dia x 0.5mm, 1sp

Inquiry

ALB-GaP-CR-23GaP Wafer, S doped, (111), 2" x 0.5mm, 2sp

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ALB-GaP-CR-24GaP Wafer, Zn-doped, (111), 2" x 0.45mm, 1sp

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ALB-GaP-CR-25GaP Wafer, Zn-doped, (111)B, 2" x 0.45mm, 1sp

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Gallium Phosphide (GaP) Crystal | Semiconductor Crystal Material

Single crystal

Doped

Type

Carrier concentration, cm-3

Dislocation density, cm-2

GaP

Undoped

N

2~6 x 1016

<1 x 105

S

N

2~8 x 1017

 

Growth method Liquid Encapsulated Czochralski (LEC)
Orientation (100) , (110) , (111) , other orientation is available upon request
Size (mm) 25 x 25 x 0.5mm, 10 x 10 x 0.5mm, 10 x 5 x 0.5mm, 5 x 5 x 0.5mm
Other size is available upon request
Surface rough Surface roughness(Ra): <=5A
Polishing EPI polished on one side or two sides
Packing Individually sealed in bags. Cassette shipments are available on request

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