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Gallium Phosphide (GaP) Semiconductor Crystal

Item Number:: ALB-GaP-CR
Product Name:: Gallium Phosphide (GaP) Semiconductor Crystal
CAS Number:: [12063-98-8]
Formula:: GaP
Shape:: Wafer (slice / substrate), boule and crystal form
Size:: Custom-made
Quantity:: 10pc, 100pc, 1000pc
Supplier:: ALB Materials Inc
Synonyms:: GaP Wafers, GaP Substrate, GaP Slice, Gallium Phosphide Wafers, Gallium Phosphide Substrate, Gallium Phosphide Slice
Price($, USD):: ($, USD)Inquiry
Related Products:: Gallium Products,Phosphorus Products

Item No.	Product	Inquiry($, USD)
ALB-GaP-CR-01	GaP wafer, undoped, (100) 10x10x0.5 mm, 1sp	Inquiry
ALB-GaP-CR-02	GaP wafer, undoped, (100) 10x10x0.5 mm, 2sp	Inquiry
ALB-GaP-CR-03	GaP wafer, undoped, (100) 2" dia X 0.45mm, 2sp, R: (3.x10^13-6.9x10^14 )ohm.cm, Semi-Insulating	Inquiry
ALB-GaP-CR-04	GaP wafer, undoped, (100) 2" dia X 0.45mm, 1sp, R: 4.2x10^7-4x10^9 ohm.cm, Semi-Insulating	Inquiry
ALB-GaP-CR-05	GaP wafer, S doped, (100), 2" dia x 0.5 mm, 1sp	Inquiry
ALB-GaP-CR-06	GaP wafer, S doped, (100), 2" dia x 0.5 mm, 2sp	Inquiry
ALB-GaP-CR-07	GaP wafer, S doped, (100), 5 x 5 x 0.33 mm, 1sp	Inquiry
ALB-GaP-CR-08	GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp	Inquiry
ALB-GaP-CR-09	GaP wafer, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm dia x 0.25 mm, 1sp	Inquiry
ALB-GaP-CR-10	GaP wafer, Zn doped, P type, (100), 2" dia x 0.45 mm, 1sp (carrier conc.:4.0-5.2E17/cc)	Inquiry
ALB-GaP-CR-11	GaP Wafer, undoped (110) 10x10x0.45 mm, 1sp	Inquiry
ALB-GaP-CR-12	GaP Wafer, undoped (110) 5x5x0.3 mm, 1sp	Inquiry
ALB-GaP-CR-13	GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp	Inquiry
ALB-GaP-CR-14	GaP Wafer, undoped, (111), 10x10x0.35mm, 2sp	Inquiry
ALB-GaP-CR-15	GaP Wafer, undoped, (111), 10x10x0.5mm, 2sp	Inquiry
ALB-GaP-CR-16	GaP Wafer, undoped, (111), 2" x 0.4mm, 2sp,	Inquiry
ALB-GaP-CR-17	GaP Wafer, undoped, (111), 2" x 0.5mm, 1sp	Inquiry
ALB-GaP-CR-18	GaP Wafer, undoped, (111), 3" x 0.45mm, 1sp	Inquiry
ALB-GaP-CR-19	GaP Wafer, undoped, (111)B, 2" x 0.4mm, 2sp, Semi-Insulating	Inquiry
ALB-GaP-CR-20	GaP wafer, undoped, (111), 2" dia X 0.45mm, 2sp, R> 7 x10^7 ohm.cm, Semi-Insulating	Inquiry
ALB-GaP-CR-21	GaP wafer, S doped, (111), 2" dia x 0.45mm, 1sp	Inquiry
ALB-GaP-CR-22	GaP wafer, S doped, (111), 2" dia x 0.5mm, 1sp	Inquiry
ALB-GaP-CR-23	GaP Wafer, S doped, (111), 2" x 0.5mm, 2sp	Inquiry
ALB-GaP-CR-24	GaP Wafer, Zn-doped, (111), 2" x 0.45mm, 1sp	Inquiry
ALB-GaP-CR-25	GaP Wafer, Zn-doped, (111)B, 2" x 0.45mm, 1sp	Inquiry

Gallium Phosphide (GaP) Crystal | Semiconductor Crystal Material

Single crystal	Doped	Type	Carrier concentration, cm^-3	Dislocation density, cm^-2
GaP	Undoped	N	2~6 x 10¹⁶	<1 x 10⁵
GaP	S	N	2~8 x 10¹⁷	<1 x 10⁵

Growth method	Liquid Encapsulated Czochralski (LEC)
Orientation	(100) , (110) , (111) , other orientation is available upon request
Size (mm)	25 x 25 x 0.5mm, 10 x 10 x 0.5mm, 10 x 5 x 0.5mm, 5 x 5 x 0.5mm Other size is available upon request
Surface rough	Surface roughness(Ra): <=5A
Polishing	EPI polished on one side or two sides
Packing	Individually sealed in bags. Cassette shipments are available on request

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