- Item Number:
- ALB-GaP-CR
- Product Name:
- Gallium Phosphide (GaP) Semiconductor Crystal
- CAS Number:
- [12063-98-8]
- Formula:
- GaP
- Shape:
- Wafer (slice / substrate), boule and crystal form
- Size:
- Custom-made
- Quantity:
- 10pc, 100pc, 1000pc
- Supplier:
- ALB Materials Inc
- Synonyms:
GaP Wafers, GaP Substrate, GaP Slice, Gallium Phosphide Wafers, Gallium Phosphide Substrate, Gallium Phosphide Slice
Price($, USD):
- ($, USD)Inquiry
- Related Products:
- Gallium Products,Phosphorus Products
Item No. | Product | Inquiry($, USD) |
ALB-GaP-CR-01 | GaP wafer, undoped, (100) 10x10x0.5 mm, 1sp | |
ALB-GaP-CR-02 | GaP wafer, undoped, (100) 10x10x0.5 mm, 2sp | |
ALB-GaP-CR-03 | GaP wafer, undoped, (100) 2" dia X 0.45mm, 2sp, R: (3.x10^13-6.9x10^14 )ohm.cm, Semi-Insulating | |
ALB-GaP-CR-04 | GaP wafer, undoped, (100) 2" dia X 0.45mm, 1sp, R: 4.2x10^7-4x10^9 ohm.cm, Semi-Insulating | |
ALB-GaP-CR-05 | GaP wafer, S doped, (100), 2" dia x 0.5 mm, 1sp | |
ALB-GaP-CR-06 | GaP wafer, S doped, (100), 2" dia x 0.5 mm, 2sp | |
ALB-GaP-CR-07 | GaP wafer, S doped, (100), 5 x 5 x 0.33 mm, 1sp | |
ALB-GaP-CR-08 | GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp | |
ALB-GaP-CR-09 | GaP wafer, S doped, (100), 2 deg toward [101] +/- 0.5 deg, 48 mm dia x 0.25 mm, 1sp | |
ALB-GaP-CR-10 | GaP wafer, Zn doped, P type, (100), 2" dia x 0.45 mm, 1sp (carrier conc.:4.0-5.2E17/cc) | |
ALB-GaP-CR-11 | GaP Wafer, undoped (110) 10x10x0.45 mm, 1sp | |
ALB-GaP-CR-12 | GaP Wafer, undoped (110) 5x5x0.3 mm, 1sp | |
ALB-GaP-CR-13 | GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp | |
ALB-GaP-CR-14 | GaP Wafer, undoped, (111), 10x10x0.35mm, 2sp | |
ALB-GaP-CR-15 | GaP Wafer, undoped, (111), 10x10x0.5mm, 2sp | |
ALB-GaP-CR-16 | GaP Wafer, undoped, (111), 2" x 0.4mm, 2sp, | |
ALB-GaP-CR-17 | GaP Wafer, undoped, (111), 2" x 0.5mm, 1sp | |
ALB-GaP-CR-18 | GaP Wafer, undoped, (111), 3" x 0.45mm, 1sp | |
ALB-GaP-CR-19 | GaP Wafer, undoped, (111)B, 2" x 0.4mm, 2sp, Semi-Insulating | |
ALB-GaP-CR-20 | GaP wafer, undoped, (111), 2" dia X 0.45mm, 2sp, R> 7 x10^7 ohm.cm, Semi-Insulating | |
ALB-GaP-CR-21 | GaP wafer, S doped, (111), 2" dia x 0.45mm, 1sp | |
ALB-GaP-CR-22 | GaP wafer, S doped, (111), 2" dia x 0.5mm, 1sp | |
ALB-GaP-CR-23 | GaP Wafer, S doped, (111), 2" x 0.5mm, 2sp | |
ALB-GaP-CR-24 | GaP Wafer, Zn-doped, (111), 2" x 0.45mm, 1sp | |
ALB-GaP-CR-25 | GaP Wafer, Zn-doped, (111)B, 2" x 0.45mm, 1sp |
Single crystal |
Doped |
Type |
Carrier concentration, cm-3 |
Dislocation density, cm-2 |
GaP |
Undoped |
N |
2~6 x 1016 |
<1 x 105 |
S |
N |
2~8 x 1017 |
Growth method | Liquid Encapsulated Czochralski (LEC) |
Orientation | (100) , (110) , (111) , other orientation is available upon request |
Size (mm) |
25 x 25 x 0.5mm, 10 x 10 x 0.5mm, 10 x 5 x 0.5mm, 5 x 5 x 0.5mm Other size is available upon request |
Surface rough | Surface roughness(Ra): <=5A |
Polishing | EPI polished on one side or two sides |
Packing | Individually sealed in bags. Cassette shipments are available on request |