Germanium Arsenide (GaAs) Semiconductor Crystal

Gallium Arsenide (GaAs) Semiconductor Crystal | ALB-GaAs-CR

Item number: ALB-GaAs-CR. Gallium Arsenide (GaAs) Semiconductor Crystal. Formula: GaAs. Shape: Wafer (slice or substrate) boule and crystal form. Quantity: 10pc, 100pc, 1000pc.

Description
Product Details

Gallium Arsenide (GaAs) Crystal | Semiconductor Crystal Material

Item No.	Product
(100) orientation
ALB-GaAs-CR-01	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 3 x 0.5mm, 2sp
ALB-GaAs-CR-02	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.5mm, 2sp
ALB-GaAs-CR-03	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.6mm, 2sp
ALB-GaAs-CR-04	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 5 x 0.5mm, 2sp
ALB-GaAs-CR-05	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.5mm, 1sp
ALB-GaAs-CR-06	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 5 x 5 x 0.5mm, 1sp
ALB-GaAs-CR-07	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.6mm, 1sp
ALB-GaAs-CR-08	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 2"D x 0.5mm, 1sp
ALB-GaAs-CR-09	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 2"D x 0.5mm, 2sp, Mechanical Grade
ALB-GaAs-CR-10	GaAs, Growing Method: LEC, (100), undoped, Semi-Insulated, 2"D x 0.35mm, 2sp
ALB-GaAs-CR-11	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 2"D x 0.5mm, 2sp
ALB-GaAs-CR-12	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 3"D x 0.5mm, 1sp
ALB-GaAs-CR-13	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 3"D x 0.5mm, 2sp
ALB-GaAs-CR-14	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 100mm D x 0.6mm, 1sp
ALB-GaAs-CR-15	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 100mm D x 0.6mm, 2sp
ALB-GaAs-CR-16	GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 4"D x (0.5-0.625),mm, 2sp
ALB-GaAs-CR-17	GaAs, (100), Te doped, N-type, 10 x 10 x 0.35mm, 1sp
ALB-GaAs-CR-18	GaAs, (100), 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp
ALB-GaAs-CR-19	GaAs, (100), Te doped, N-type, 5 x 5 x 0.35mm, 1sp
ALB-GaAs-CR-20	GaAs, (100), Te doped, N-type, 2" dia x 0.35mm, 1sp
ALB-GaAs-CR-21	GaAs, (100), 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp
ALB-GaAs-CR-22	GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.35mm, 1sp, cc: (1.65-3.92) x 10^18 /cm^3
ALB-GaAs-CR-23	GaAs, Growing Method: VGF, (100), Si doped, N-type, 3" dia x 0.625mm, 2sp, cc: (1.4-3.96) x 10^18 /cm^3
ALB-GaAs-CR-24	GaAs, Growing Method: VGF, (100), Si-doped, N-type, 10 x 10 x 0.5mm, 1sp
ALB-GaAs-CR-25	GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.35mm, 2sp, cc: (1.07-3.89) x 10^18 /cm^3
ALB-GaAs-CR-26	GaAs, Growing Method: VGF, (100), Si doped, N-type, 4" dia x 0.625mm, 2sp, cc: (1.47-3.78) x 10^18 /cm^3
ALB-GaAs-CR-27	GaAs, Growing Method: VGF, (100), Si-doped, N-type, 5 x 5 x 0.5mm, 1sp
ALB-GaAs-CR-28	GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.5mm, 2sp, cc: (3.8-6.2), x 10^16 /cm^3
ALB-GaAs-CR-29	GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.5mm, 1sp, cc:(0.63-1.17) x 10^18/cm^3
ALB-GaAs-CR-30	GaAs, Growing Method: VGF, (100), Zn doped, P-Type, 10 x 10 x 0.625mm, 1sp
ALB-GaAs-CR-31	GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" x 0.5mm, 2sp, (8.62-9.38) x 10^17 /cm^3
ALB-GaAs-CR-32	GaAs, Growing Method: VGF, (100), Zn doped, P-Type, 3" x 0.5mm, 1sp
ALB-GaAs-CR-33	GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" dia x 0.4mm, 2.7 E16 cm^-3, 2sp
ALB-GaAs-CR-34	GaAs, Growing Method: VGF, (100), Zn doped, P-type, 3" dia x 0.625mm, 1sp
ALB-GaAs-CR-35	GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" x 0.5mm, 1sp, (5.17-9.38) x 10^17 /cm^3
ALB-GaAs-CR-36	GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" x 0.35mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3
(110) orientation
ALB-GaAs-CR-37	GaAs, (110) orientation, undoped, 5 x 5 x 5.5-5.6mm, 2sp
ALB-GaAs-CR-38	GaAs, (110) orientation, undoped, 5 x 6 x 2.0mm, 2sp
ALB-GaAs-CR-39	GaAs, LEC Grown (110) orientation, undoped, Semi-Insulated, 2"D x 2.8 mm, as cut
ALB-GaAs-CR-40	GaAs, VGF Grown (110) orientation, Si-doped, N type, 10 x 10 x 0.3mm, 2sp
ALB-GaAs-CR-41	GaAs, VGF Grown (110) orientation, Si-doped, N type, 10 x 5 x 0.3 mm, 2sp
ALB-GaAs-CR-42	GaAs, VGF Grown (110) orientation, Si-doped, N type, 2" dia x 0.35mm, 1sp
ALB-GaAs-CR-43	GaAs, VGF Grown (110) orientation, Si-doped, N type, 5 x 5 x 0.3 mm, 2sp
ALB-GaAs-CR-44	GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 10 x 10 x 0.5mm, 1sp
ALB-GaAs-CR-45	GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 100mm dia x 0.5mm, 1sp
ALB-GaAs-CR-46	GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 2" dia x 0.5mm, 1sp
ALB-GaAs-CR-47	GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 2" dia x 0.5mm, 2sp
ALB-GaAs-CR-48	GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 20 x 20 x 0.5mm, 1sp
ALB-GaAs-CR-49	GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 3" dia x 0.5mm, 1sp
ALB-GaAs-CR-50	GaAs, VGF Grown (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp
(111) orientation
ALB-GaAs-CR-51	GaAs, (111)A orientation, Semi-Insulating, undoped, 10 x 10 x 0.55mm, 1sp,
ALB-GaAs-CR-52	GaAs, (111)A orientation, Semi-Insulating, undoped, 10 x 10 x 0.5mm, 1sp
ALB-GaAs-CR-53	GaAs, (111)A orientation, Semi-Insulating, undoped, 5 x 5 x 0.5-0.55mm, 1sp,
ALB-GaAs-CR-54	GaAs, (111)B orientation, Semi-Insulating, undoped, 10 x 10 x 0.625mm, 1sp,
ALB-GaAs-CR-55	GaAs, (111)B orientation, Semi-Insulating, undoped, 5 x 5 x 0.625mm, 1sp
ALB-GaAs-CR-56	GaAs, Growing Method: VGF, (111)A, SI, undoped, 2" dia x 0.5 mm, 1 sp
ALB-GaAs-CR-57	GaAs, Growing Method: VGF, (111)A, SI, undoped, 4" dia x 0.55 mm, 1 sp
ALB-GaAs-CR-58	GaAs, Growing Method: VGF, (111)A, SI, undoped, 4" dia x 0.55 mm, 2sp
ALB-GaAs-CR-59	GaAs, Growing Method: VGF, (111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp
ALB-GaAs-CR-60	GaAs, Growing Method: VGF, (111)B, SI, undoped, 4" dia x 0.625 mm, 1 sp
ALB-GaAs-CR-61	GaAs, Growing Method: VGF, (111)B, SI, undoped, 4" dia x 0.625 mm, 2sp
ALB-GaAs-CR-62	GaAs, Growing Method: VGF, (111)B, Si-doped, 2" dia x 0.325mm, 1sp
ALB-GaAs-CR-63	GaAs, Growing Method: VGF, (111)B, Si-doped, 2" dia x 0.35mm, 2sp
ALB-GaAs-CR-64	GaAs, Growing Method: VGF, (111)B, Zn-doped, P-type, 2" dia x 0.4 mm, 2sp

Gallium Arsenide (GaAs) Crystal Specification:

Single crystal	Doped	Type	Carrier concentration, cm^-3	Dislocation density, cm^-2
GaAs	Undoped	Si	/	<5 x 10⁵
	Si	n-type	>5 x 10¹⁷
	Zn	p-type	>5 x 10¹⁷

Growth method	Vertical Gradient Freeze(VGF), Liquid Encapsulated Czochralski (LEC), Horizontal Bridgman (HB)
Orientation	(100) , (110) , (111) , other orientation is available upon request
Size (mm)	25 x 25 x 0.5mm, 10 x 10 x 0.5mm, 10 x 5 x 0.5mm, 5 x 5 x 0.5mm Other size is available upon request
Surface rough	Surface roughness(Ra): <=5A
Polishing	Single or double surface polished
Packing	Individually sealed in bags. Cassette shipments are available on request

Reference ALB-GaAs-CR

Data sheet

Item Number: ALB-GaAs-CR
Formula: GaAs
Size: custom-made
Shape: Wafer (slice or substrate) boule and crystal form

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