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Germanium Arsenide (GaAs) Semiconductor Crystal

Item Number:
ALB-GaAs-CR
Product Name:
Germanium Arsenide (GaAs) Semiconductor Crystal
CAS Number:
[1303-00-0]
Formula:
GaAs
Shape:
Wafer (slice / substrate), boule and crystal form
Size:
Custom-made
Quantity:
10pc, 100pc, 1000pc
Supplier:
ALB Materials Inc
Synonyms:

GaAs Wafers, GaAs Substrate, GaAs Slice, Germanium Arsenide Wafers, Germanium Arsenide Substrate, Germanium Arsenide Slice

Price($, USD):

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Related Products:
Gallium Products,Arsenic Products

Germanium Arsenide (GaAs) Crystal | Semiconductor Crystal Material

Item No. Product

Inquiry($, USD)

(100) orientation

ALB-GaAs-CR-01 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 3 x 0.5mm, 2sp

Inquiry

ALB-GaAs-CR-02 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.5mm, 2sp

Inquiry

ALB-GaAs-CR-03 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.6mm, 2sp

Inquiry

ALB-GaAs-CR-04 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 5 x 0.5mm, 2sp

Inquiry

ALB-GaAs-CR-05 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.5mm, 1sp

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ALB-GaAs-CR-06 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 5 x 5 x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-07 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 10 x 10 x 0.6mm, 1sp

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ALB-GaAs-CR-08 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 2"D x 0.5mm, 1sp

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ALB-GaAs-CR-09 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 2"D x 0.5mm, 2sp, Mechanical Grade

Inquiry

ALB-GaAs-CR-10 GaAs, Growing Method: LEC, (100), undoped, Semi-Insulated, 2"D x 0.35mm, 2sp

Inquiry

ALB-GaAs-CR-11 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 2"D x 0.5mm, 2sp

Inquiry

ALB-GaAs-CR-12 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 3"D x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-13 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 3"D x 0.5mm, 2sp

Inquiry

ALB-GaAs-CR-14 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 100mm D x 0.6mm, 1sp

Inquiry

ALB-GaAs-CR-15 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 100mm D x 0.6mm, 2sp

Inquiry

ALB-GaAs-CR-16 GaAs, Growing Method: VGF, (100), undoped, Semi-Insulated, 4"D x (0.5-0.625),mm, 2sp

Inquiry

ALB-GaAs-CR-17 GaAs, (100), Te doped, N-type, 10 x 10 x 0.35mm, 1sp

Inquiry

ALB-GaAs-CR-18 GaAs, (100), 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-19 GaAs, (100), Te doped, N-type, 5 x 5 x 0.35mm, 1sp

Inquiry

ALB-GaAs-CR-20 GaAs, (100), Te doped, N-type, 2" dia x 0.35mm, 1sp

Inquiry

ALB-GaAs-CR-21 GaAs, (100), 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp

Inquiry

ALB-GaAs-CR-22 GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.35mm, 1sp, cc: (1.65-3.92) x 10^18 /cm^3

Inquiry

ALB-GaAs-CR-23 GaAs, Growing Method: VGF, (100), Si doped, N-type, 3" dia x 0.625mm, 2sp, cc: (1.4-3.96) x 10^18 /cm^3

Inquiry

ALB-GaAs-CR-24 GaAs, Growing Method: VGF, (100), Si-doped, N-type, 10 x 10 x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-25 GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.35mm, 2sp, cc: (1.07-3.89) x 10^18 /cm^3

Inquiry

ALB-GaAs-CR-26 GaAs, Growing Method: VGF, (100), Si doped, N-type, 4" dia x 0.625mm, 2sp, cc: (1.47-3.78) x 10^18 /cm^3

Inquiry

ALB-GaAs-CR-27 GaAs, Growing Method: VGF, (100), Si-doped, N-type, 5 x 5 x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-28 GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.5mm, 2sp, cc: (3.8-6.2), x 10^16 /cm^3

Inquiry

ALB-GaAs-CR-29 GaAs, Growing Method: VGF, (100), Si doped, N-type, 2" dia x 0.5mm, 1sp, cc:(0.63-1.17) x 10^18/cm^3

Inquiry

ALB-GaAs-CR-30 GaAs, Growing Method: VGF, (100), Zn doped, P-Type, 10 x 10 x 0.625mm, 1sp

Inquiry

ALB-GaAs-CR-31 GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" x 0.5mm, 2sp, (8.62-9.38) x 10^17 /cm^3

Inquiry

ALB-GaAs-CR-32 GaAs, Growing Method: VGF, (100), Zn doped, P-Type, 3" x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-33 GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" dia x 0.4mm, 2.7 E16 cm^-3, 2sp

Inquiry

ALB-GaAs-CR-34 GaAs, Growing Method: VGF, (100), Zn doped, P-type, 3" dia x 0.625mm, 1sp

Inquiry

ALB-GaAs-CR-35 GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" x 0.5mm, 1sp, (5.17-9.38) x 10^17 /cm^3

Inquiry

ALB-GaAs-CR-36 GaAs, Growing Method: VGF, (100), Zn doped, P-type, 2" x 0.35mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3

Inquiry

(110) orientation

ALB-GaAs-CR-37 GaAs, (110) orientation, undoped, 5 x 5 x 5.5-5.6mm, 2sp

Inquiry

ALB-GaAs-CR-38 GaAs, (110) orientation, undoped, 5 x 6 x 2.0mm, 2sp

Inquiry

ALB-GaAs-CR-39 GaAs, LEC Grown (110) orientation, undoped, Semi-Insulated, 2"D x 2.8 mm, as cut

Inquiry

ALB-GaAs-CR-40 GaAs, VGF Grown (110) orientation, Si-doped, N type, 10 x 10 x 0.3mm, 2sp

Inquiry

ALB-GaAs-CR-41 GaAs, VGF Grown (110) orientation, Si-doped, N type, 10 x 5 x 0.3 mm, 2sp

Inquiry

ALB-GaAs-CR-42 GaAs, VGF Grown (110) orientation, Si-doped, N type, 2" dia x 0.35mm, 1sp

Inquiry

ALB-GaAs-CR-43 GaAs, VGF Grown (110) orientation, Si-doped, N type, 5 x 5 x 0.3 mm, 2sp

Inquiry

ALB-GaAs-CR-44 GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 10 x 10 x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-45 GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 100mm dia x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-46 GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 2" dia x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-47 GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 2" dia x 0.5mm, 2sp

Inquiry

ALB-GaAs-CR-48 GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 20 x 20 x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-49 GaAs, VGF Grown (110) orientation, undoped, Semi-Insulated, 3" dia x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-50 GaAs, VGF Grown (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, 2sp

Inquiry

(111) orientation

ALB-GaAs-CR-51 GaAs, (111)A orientation, Semi-Insulating, undoped, 10 x 10 x 0.55mm, 1sp,

Inquiry

ALB-GaAs-CR-52 GaAs, (111)A orientation, Semi-Insulating, undoped, 10 x 10 x 0.5mm, 1sp

Inquiry

ALB-GaAs-CR-53 GaAs, (111)A orientation, Semi-Insulating, undoped, 5 x 5 x 0.5-0.55mm, 1sp,

Inquiry

ALB-GaAs-CR-54 GaAs, (111)B orientation, Semi-Insulating, undoped, 10 x 10 x 0.625mm, 1sp,

Inquiry

ALB-GaAs-CR-55 GaAs, (111)B orientation, Semi-Insulating, undoped, 5 x 5 x 0.625mm, 1sp

Inquiry

ALB-GaAs-CR-56 GaAs, Growing Method: VGF, (111)A, SI, undoped, 2" dia x 0.5 mm, 1 sp

Inquiry

ALB-GaAs-CR-57 GaAs, Growing Method: VGF, (111)A, SI, undoped, 4" dia x 0.55 mm, 1 sp

Inquiry

ALB-GaAs-CR-58 GaAs, Growing Method: VGF, (111)A, SI, undoped, 4" dia x 0.55 mm, 2sp

Inquiry

ALB-GaAs-CR-59 GaAs, Growing Method: VGF, (111)A, Zn-doped, P-type, 2" dia x 0.5mm, 2sp

Inquiry

ALB-GaAs-CR-60 GaAs, Growing Method: VGF, (111)B, SI, undoped, 4" dia x 0.625 mm, 1 sp

Inquiry

ALB-GaAs-CR-61 GaAs, Growing Method: VGF, (111)B, SI, undoped, 4" dia x 0.625 mm, 2sp

Inquiry

ALB-GaAs-CR-62 GaAs, Growing Method: VGF, (111)B, Si-doped, 2" dia x 0.325mm, 1sp

Inquiry

ALB-GaAs-CR-63 GaAs, Growing Method: VGF, (111)B, Si-doped, 2" dia x 0.35mm, 2sp

Inquiry

ALB-GaAs-CR-64 GaAs, Growing Method: VGF, (111)B, Zn-doped, P-type, 2" dia x 0.4 mm, 2sp

Inquiry


Germanium Arsenide (GaAs) Crystal Specification:

Single crystal

Doped

Type

Carrier concentration, cm-3

Dislocation density, cm-2

GaAs

Undoped

Si

/

<5 x 105

Si

n-type

>5 x 1017

Zn

p-type

>5 x 1017

 

Growth method Vertical Gradient Freeze(VGF), Liquid Encapsulated Czochralski (LEC), Horizontal Bridgman (HB)
Orientation (100) , (110) , (111) , other orientation is available upon request
Size (mm) 25 x 25 x 0.5mm, 10 x 10 x 0.5mm, 10 x 5 x 0.5mm, 5 x 5 x 0.5mm
Other size is available upon request
Surface rough Surface roughness(Ra): <=5A
Polishing Single or double surface polished
Packing Individually sealed in bags. Cassette shipments are available on request


Germanium Arsenide (GaAs) Wafer Specification:

Diameter (inch)

2"

3"

Diameter (mm)

50.8±0.5mm

76.2±0.5mm

Orientation

(100) ±0.5°

(100) ±0.5°

Thickness (µm)

350±25

350±25

Other orientations and sizes are available upon request.


Properties of GaAs at room-temperature:

Property Parameter
Crystal structure Zinc blende
Lattice constant 5.65 Å
Density 5.32 g/cm3
Atomic density 4.5 × 1022 atoms/cm3
Molecular weight 144.64
Bulk modulus 7.55 × 1011 dyn/cm2
Sheer modulus 3.26 × 1011 dyn/cm2
Coefficient of thermal expansion 5.8 × 10–6 K–1
Specific heat 0.327 J/g-K
Lattice thermal conductivity 0.55 W/cm-°C
Dielectric constant 12.85
Band gap 1.42 eV
Threshold field 3.3 kV/cm
Peak drift velocity 2.1 × 107 cm/s
Electron mobility (undoped) 8500 cm2/V-s
Hole mobility (undoped) 400 cm2/V-s
Melting point 1238°C

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