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Germanium (Ge) Infrared Crystal

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Germanium (Ge) Infrared Crystal
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Wafer (slice / substrate), boule and crystal form
10pc, 100pc, 1000pc
ALB Materials Inc

Ge Wafers, Ge Substrate, Ge Slice, Germanium Wafers, Germanium Substrate, Germanium Slice

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Germanium Products

Germanium (Ge) Crystal | Infrared Crystal Material

Growth method Czochralski method
Crystal structure M3
Unit cell constant a=5.65754 Å,    
Density 5.323g/cm3
Melt point 937.4°C
Doped material No doped Sb-doped In / Ga-doped
Type / N P
Resistivity >35Ωcm 0.05Ωcm 0.05~0.1Ωcm
EPD <4x103/cm2 <4x103/cm2 <4x103/cm2
Size 10x3, 10x5, 10x10, 15x15, , 20x15, 20x20,
dia2"x 0.33mm dia2"x 0.43mm 15 x 15 mm
Thickness 0.5mm, 1.0mm
Polishing EPI polished on one side or two sides
Crystal orientation <100>, <110>, <111>, ±0.5º
Ra: ≤5Å(5µm×5µm)
Packing Individually sealed in bags. Cassette shipments are available on request

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