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Boron-Doped Peroxo Zirconium Oxide

Tantalum 02/02/2021

Boron-Doped Peroxo-Zirconium Oxide Dielectric

Small size Boron-Doped Peroxo-Zirconium Oxide Dielectric

Boron-Doped Peroxo-Zirconium Oxide Dielectric for High-Performance, Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistor [2021].

We developed a solution-processed indium oxide (InO) thin-film transistor (TFT) with a boron-doped Peroxo-zirconium (ZrO:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the InO precursor.

The formation of InO and ZrO:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS).

Boron was selected as a dopant to make a denser ZrO film.

The ZrO:B film effectively blocked the leakage current at 200 °C with high breakdown strength.

To evaluate the ZrO:B film as a gate dielectric, we fabricated InO TFTs on the ZrO:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C.

Gray powder for Zirconium Boride

The resulting mobilities were 1.25 and 39.3 cm²/(V s), respectively.

Finally, we realized a flexible InO TFT with the ZrO:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with mobility of 4.01 cm²/(V s).

Our results suggest that aqueous solution-processed InO TFTs on ZrO:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

[ACS Applied Materials & Interfaces]

We developed a solution-processed indium oxide (InO) thin-film transistor (TFT) with a boron-doped Peroxo-zirconium (ZrO:B) dielectric on silicon as well as polyimide substrate at 200 °C, using water as the solvent for the InO precursor.

The formation of InO and ZrO:B films were intensively studied by thermogravimetric differential thermal analysis (TG-DTA), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FT IR), high-resolution X-ray diffraction (HR-XRD), and X-ray photoelectron spectroscopy (XPS).

Boron was selected as a dopant to make a denser ZrO film.

The ZrO:B film effectively blocked the leakage current at 200 °C with high breakdown strength.

ZrB2 Powder Zirconium Diboride Powder

To evaluate the ZrO:B film as a gate dielectric, we fabricated InO TFTs on the ZrO:B dielectrics with silicon substrates and annealed the resulting samples at 200 and 250 °C.

The resulting mobilities were 1.25 and 39.3 cm²/(V s), respectively.

Finally, we realized a flexible InO TFT with the ZrO:B dielectric on a polyimide substrate at 200 °C, and it successfully operated a switching device with mobility of 4.01 cm²/(V s).

Our results suggest that aqueous solution-processed InO TFTs on ZrO:B dielectrics could potentially be used for low-cost, low-temperature, and high-performance flexible devices.

We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a boron-doped Peroxo-Zirconium.

Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor.

High-performance solution-processed metal oxide (MO) thin-film transistors (TFTs) are realized by fabricating a homojunction of indium oxide (In2O3 ) and polyethyleneimine (PEI)-doped In2 O3 (In2 O3:x% PEI, x = 0.5-4.0 wt%) as the channel layer.

99.9 Zirconium Diboride ZrB2

A two-dimensional electron gas (2DEG) is thereby achieved by creating a band offset between the In2 O3 and PEI-In2 O3 via work function tuning of the In2 O3:x% PEI, from 4.00 to 3.62 eV as the PEI content is increased from 0.0 (pristine In2 O3 ) to 4.0 wt%, respectively.

The resulting devices achieve electron mobilities greater than 10 cm2 V-1 s-1 on a 300 nm SiO2 gate dielectric.

Importantly, these metrics exceed those of the devices composed of the pristine In2 O3 materials, which achieve maximum mobility of ≈4 cm2 V-1 s-1.

Furthermore, mobility as high as 30 cm2 V-1 s-1 is achieved on a high-k ZrO2 dielectric in the homojunction devices.

This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material.

Transparent and Solution Processable Low Contact Resistance SWCNT/AZONP Bilayer Electrodes for Sol-Gel Metal Oxide Thin Film Transistor

The contact resistance between source/drain electrodes and the semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT).

In this work, we introduced a transparent and solution-processable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nanoparticle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol-gel thin film.

By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them.

Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing field-effect mobility of 5.38 cm2/V·s at 250°C.

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