
Item number: ALB-SiC-CR. Silicon Carbide (SiC) Semiconductor Crystal. Formula: SiC. Shape: Wafer (slice or substrate) boule and crystal form. Quantity: 10pc, 100pc, 1000pc.
Item No. | Product |
ALB-SiC-CR-01 | SiC - 4H (0001), 1" dia. x0.26mm, 1sp |
ALB-SiC-CR-02 | SiC - 4H (0001), 10x10x0.33mm, Si Face, 1sp |
ALB-SiC-CR-03 | SiC - 4H (0001), 2" dia. x0.33mm, 1sp |
ALB-SiC-CR-04 | SiC - 4H (0001), 2" dia. x0.33mm, 2sp |
ALB-SiC-CR-05 | SiC - 4H (0001), 5x5x0.33mm, 2sp |
ALB-SiC-CR-06 | SiC - 4H (0001), 5x5x0.3mm, 1sp |
ALB-SiC-CR-07 | SiC - 6H (0001), 1" dia. x0.26mm, 1sp |
ALB-SiC-CR-08 | SiC - 6H (0001), 1/4"x1/4"x0.26mm, 2sp |
ALB-SiC-CR-09 | SiC - 6H (0001), 10x10x0.26mm, 2sp |
ALB-SiC-CR-10 | SiC - 6H (0001), 10x10x0.3-0.33mm, 1sp |
ALB-SiC-CR-11 | SiC - 6H (0001), 10x10x0.33mm, 2sp |
ALB-SiC-CR-12 | SiC - 6H (0001), 5x5x0.3-0.33mm, 1sp |
ALB-SiC-CR-13 | SiC - 6H (0001), 5x5x0.33mm, 2sp |
ALB-SiC-CR-14 | SiC - 6H (0001), 8mm dia. x 0.3mm, 1sp |
Silicon Carbide (SiC) Crystal | Semiconductor Crystal Material
Growth method | MOCVD |
Crystal Structure | M6 |
Unit cell constant | a=3.08 Å, c=15.08 Å |
Sequence | ABCACB |
Direction | <0001> 3.5º |
With clearance | 2.93 eV |
Hardness | 9.2 (mohs) |
Heat travels @300K | 5 W/ cm.k |
Dielectric constants | e(11)=e(22)=9.66 e(33)=10.33 |
Size | 10x3, 10x5, 10x10, 15x15, , 20x15, 20x20, |
dia2"x 0.33mm, dia2"x 0.43mm | |
Thickness | 0.5mm, 1.0mm |
Polishing | EPI polished on one side or two sides |
Crystal orientation | <001>±0.5º |
redirection precision | ±0.5º |
Redirection the edge: | 2º (special in 1º ) |
Angle of crystalline | Special size and orientation are available upon request |
Surface roughness | Ra≤5Å (5µm x 5µm) |
Packing | Individually sealed in bags. Cassette shipments are available on request |
Data sheet