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Silicon Carbide (SiC) Semiconductor Crystal

Item Number:
ALB-SiC-CR
Product Name:
Silicon Carbide (SiC) Semiconductor Crystal
CAS Number:
[409-21-2]
Formula:
SiC
Shape:
Wafer (slice / substrate), boule and crystal form
Size:
Custom-made
Quantity:
10pc, 100pc, 1000pc
Supplier:
ALB Materials Inc
Synonyms:

SiC Wafers, SiC Substrate, SiC Slice, Silicon Carbide Wafers, Silicon Carbide Substrate, Silicon Carbide Slice

Price($, USD):

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Related Products:
Silicon Products,Carbon Products
Item No. Product

Inquiry($, USD)

ALB-SiC-CR-01SiC - 4H (0001), 1" dia. x0.26mm, 1sp

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ALB-SiC-CR-02SiC - 4H (0001), 10x10x0.33mm, Si Face, 1sp

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ALB-SiC-CR-03SiC - 4H (0001), 2" dia. x0.33mm, 1sp

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ALB-SiC-CR-04SiC - 4H (0001), 2" dia. x0.33mm, 2sp

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ALB-SiC-CR-05SiC - 4H (0001), 5x5x0.33mm, 2sp

Inquiry

ALB-SiC-CR-06SiC - 4H (0001), 5x5x0.3mm, 1sp

Inquiry

ALB-SiC-CR-07SiC - 6H (0001), 1" dia. x0.26mm, 1sp

Inquiry

ALB-SiC-CR-08SiC - 6H (0001), 1/4"x1/4"x0.26mm, 2sp

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ALB-SiC-CR-09SiC - 6H (0001), 10x10x0.26mm, 2sp

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ALB-SiC-CR-10SiC - 6H (0001), 10x10x0.3-0.33mm, 1sp

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ALB-SiC-CR-11SiC - 6H (0001), 10x10x0.33mm, 2sp

Inquiry

ALB-SiC-CR-12SiC - 6H (0001), 5x5x0.3-0.33mm, 1sp

Inquiry

ALB-SiC-CR-13SiC - 6H (0001), 5x5x0.33mm, 2sp

Inquiry

ALB-SiC-CR-14SiC - 6H (0001), 8mm dia. x 0.3mm, 1sp

Inquiry

Silicon Carbide (SiC) Crystal | Semiconductor Crystal Material

Growth method MOCVD
Crystal Structure M6
Unit cell constant a=3.08 Å,  c=15.08 Å 
Sequence ABCACB
Direction <0001> 3.5º
With clearance 2.93 eV
Hardness 9.2 (mohs)
Heat travels @300K 5 W/ cm.k
Dielectric constants e(11)=e(22)=9.66 e(33)=10.33
Size 10x3, 10x5, 10x10, 15x15, , 20x15, 20x20,
dia2"x 0.33mm, dia2"x 0.43mm
Thickness 0.5mm, 1.0mm
Polishing EPI polished on one side or two sides
Crystal orientation <001>±0.5º
redirection precision ±0.5º
Redirection the edge: 2º (special in 1º )
Angle of crystalline Special size and orientation are available upon request
Surface roughness Ra≤5Å (5µm x 5µm)
Packing Individually sealed in bags. Cassette shipments are available on request

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